MCD413 Datasheet | Freescale Semiconductor

Freescale P-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. - - - - Low r DS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DPAK saves board space Fast switching speed High performance trench technology AOD4 13 / MCD4 13 PRODUCT SUMMARY VDS (V) r DS(on) m(Ω) 69 @ VGS = -10V -40 106 @ VGS = -4.5V ID (A) 22 18 ABSOLUTE MAX IMUM RATING S (TA = 25 C UNLESS OTHERW ISE NOTED) Sym bol Maxim um Units Param eter VDS -40 Drain-Source Voltage V VGS ±20 G ate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation a b a o a o TA=25 C ID o 22 ±72 -30 50 IDM IS TA=25 C PD A A W o Continuous Source Current (Diode Conduction) Operating Junction and Storage Tem perature Range TJ, Tstg -55 to 175 THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Case a Maximum 50 3.0 Units o o RθJA RθJC C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature .freescale.net.cn Free Datasheet http://../ Freescale AOD4 13 / MCD4 13 SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A A o Symbol VGS(th) IGSS IDSS ID(on) r DS(on) g fs VSD Qg Qgs Qgd td(on) tr td(off) tf Test Conditions VDS = VGS, ID = -250 u A VDS = 0 V, VGS = ±25 V Limits Unit Min Typ Max -1 ±100 n A u A...