• Part: MRFE6S8046GNR1
  • Description: RF Power Field Effect Transistors
  • Manufacturer: Freescale Semiconductor
  • Size: 467.17 KB
Download MRFE6S8046GNR1 Datasheet PDF
MRFE6S8046GNR1 page 2
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MRFE6S8046GNR1 Key Features

  • Class F Output Matched for Higher Impedances and Greater Efficiency
  • Designed for High Efficiency. Typical Drain Efficiency @ P1dB ] 66%
  • Characterized with Series Equivalent Large
  • Signal Impedance Parameters and mon Source S
  • Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate
  • Source Voltage Range for Improved Class C Operation
  • 225°C Capable Plastic Package