MRFE6S8046GNR1 Overview
Freescale Semiconductor ‘ Technical Data Document Number: 0, 5/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier amplifier applications.
MRFE6S8046GNR1 Key Features
- Class F Output Matched for Higher Impedances and Greater Efficiency
- Designed for High Efficiency. Typical Drain Efficiency @ P1dB ] 66%
- Characterized with Series Equivalent Large
- Signal Impedance Parameters and mon Source S
- Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate
- Source Voltage Range for Improved Class C Operation
- 225°C Capable Plastic Package