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TJ15P04M3 - MOSFETs Silicon P-Channel MOS

Key Features

  • (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche ene.

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TJ15P04M3 MOSFETs Silicon P-Channel MOS (U-MOS -H) 1. Applications • • DC-DC Converters Desktop Computers 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK 4.