1278
1278 is 2SK1278 manufactured by Fuji Electric.
Features
Include fast recovery diode High voltage Low driving power
Applications
Motor controllers Inverters Choppers
3. Source
JEDEC EIAJ
SC-65
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls) IDR(puls) VGS PD Tch Tstg Rating 500 10 40 10 ±20 100 +150 -55 to +150 Unit V V A A V W °C °C
Equivalent circuit schematic
Drain(D)
FRD Gate(G) Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Diode forward on-voltage Reverse recovery time Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf V SD t rr Test Conditions ID=1m A VGS=0V ID=10m A VDS=VGS VDS=500V VGS=0V VGS=±20V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V RG=25 Ω ID=10A VGS=10V
Min.
500 2.1 Tch=25°C
Typ.
Max.
Units
V V µA n A Ω S p F
IF=IDR VGS=0V Tch=25°C IF=IDR di/dt=100A/µs Tch=25°C
3.0 4.0 10 500 10 100 0.80 1.10 4.0 8.0 1100 1600 140 210 75 110 25 40 60 90 200 300 90 140 0.95 1.8 150 200 ns
V ns
Thermal characteristics
Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case
Min.
Typ.
Max.
35.0 1.25
Units
°C/W °C/W
..
FUJI POWER MOSFET
Characteristics
Typical output characteristics
30 3.0
2SK1278
On state resistance vs....