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20N60S1 - N-Channel enhancement mode power MOSFET

General Description

Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAR E

Key Features

  • Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) Outline Drawings [mm] TO-220 3.6± 0.2 10 +0.5 0 4.5±0.2 1.3±0.2.

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Datasheet Details

Part number 20N60S1
Manufacturer Fuji Electric
File Size 417.90 KB
Description N-Channel enhancement mode power MOSFET
Datasheet download datasheet 20N60S1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FMP20N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET 2.7 ±0.1 6.4 ±0.2 15 ± 0.2 Features Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) Outline Drawings [mm] TO-220 3.6± 0.2 10 +0.5 0 4.5±0.2 1.3±0.2 Applications UPS Server Telecom Power conditioner system Power supply 3.6 ±0.2 13.5 min. 1.2 ± 0.2 1 2.54 ± 0.2 23 0.8 +0.2 -0.1 2.54± 0.2 PRE-SOLDER 0.4 +0.2 0 2.7±0.2 1 23 CONNECTION 1 GATE 2 DRAIN 3 SOURCE JEDEC : TO-220AB DIMENSIONS ARE IN MILLIMETERS.