20N60S1 - N-Channel enhancement mode power MOSFET

Product Overview

Fuji Electric

Datasheet Details

Part number	20N60S1
Manufacturer	Fuji Electric
File Size	417.90 KB
Description	N-Channel enhancement mode power MOSFET
Datasheet	20N60S1 Datasheet
Additional preview pages of the 20N60S1 datasheet.

Product details

Description

Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAR EAS dVDS/dt dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Temperature range Note 1 : Limited by maximum channel temperature. 2 : Tch≤150°C, See Fig.1 and Fig.2 Note

Features

Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) Outline Drawings [mm] TO-220 3.6± 0.2 10 +0.5 0 4.5±0.2 1.3±0.2.

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Published: Apr 22, 2015 |