• Part: 2SC4276
  • Description: POWER TRANSISTOR
  • Category: Transistor
  • Manufacturer: Fuji Electric
  • Size: 111.79 KB
Download 2SC4276 Datasheet PDF
Fuji Electric
2SC4276
2SC4276 is POWER TRANSISTOR manufactured by Fuji Electric.
Features High voltage,High speed switching Low saturation voltage High reliability Applications Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers JEDEC EIAJ SC-65 Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Base current Collector power disspation Operating junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 500 400 10 15 5 80 +150 -55 to +150 Unit V V V A A W °C °C Electrical characteristics (Tc =25°C unless otherwise specified) Item Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Base leakage current Emitter-Base leakage current D.C. current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage - 1 Switching time Symbol VCBO VCEO VEBO ICBO IEBO h FE VCE(Sat) VBE(Sat) ton tstg tf Test Conditions ICBO = 1m A ICEO = 0.2A IEBO = 1m A VCBO = 450V VEBO = 10V IC = 2A, VCE = 5V IC = 6A, IB = 1200m A IC = 7.5A, IB1 = 750m A IB2 = -1500m A, RL = 20 ohm Pw = 20µs Duty=<2% Min. 500 400 10 Typ. Max. Units V V V m A m A V V µs µs µs 0.1 0.1 65 0.8 1.2 1.0 2.5 0.5 Thermal characteristics Item Thermal resistance Symbol Rth(j-c) Test Conditions Junction to case Min. Typ. Max. Units °C/W Characteristics FUJI POWER TRANSISTOR Collector-Emitter voltage VCE[V] D.C. current gain h FE Base current IB[A] Collector current IC[A] Collector Output Characteristics DC Current Gain Saturation voltage VCE(sat), VBE(sat)[V] Collector current IC[A] Collector current IC[A] Collector-Emitter voltage...