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2SK1936-01 - N-channel MOS-FET

Download the 2SK1936-01 datasheet PDF. This datasheet also covers the 2SK1936-1 variant, as both devices belong to the same n-channel mos-fet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof >.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK1936-1_FujiElectric.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fuji Electric

Part Number Description
2SK1937-01 N-channel MOS-FET
2SK1938-01R Power MOSFET
2SK1939-01 N-channel MOS-FET
2SK1916-01 N-CHANNEL SILICON POWER MOS-FET
2SK1916-01R N-CHANNEL SILICON POWER MOS-FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK1936-01 FAP-IIA Series > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Symbol Rating Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current V DS V DGR ID 500 500 10 Pulsed Drain Current I D(puls) 40 Gate-Source-Voltage V GS ±30 Max.