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2SK1945-01S - N-channel MOS-FET

This page provides the datasheet information for the 2SK1945-01S, a member of the 2SK1945-01L N-channel MOS-FET family.

Datasheet Summary

Features

  • - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Outline Drawing >.

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Datasheet preview – 2SK1945-01S

Datasheet Details

Part number 2SK1945-01S
Manufacturer Fuji Electric
File Size 208.04 KB
Description N-channel MOS-FET
Datasheet download datasheet 2SK1945-01S Datasheet
Additional preview pages of the 2SK1945-01S datasheet.

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Full PDF Text Transcription

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2SK1945-01L,S FAP-IIA Series > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Outline Drawing > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier N-channel MOS-FET 900V 2,8Ω 5A 80W > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Symbol Rating Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current V DS V DGR ID 900 900 5 Pulsed Drain Current I D(puls) 20 Gate-Source-Voltage V GS ±30 Max.
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