• Part: 2SK2018-01S
  • Description: N-channel MOS-FET
  • Manufacturer: Fuji Electric
  • Size: 214.85 KB
Download 2SK2018-01S Datasheet PDF
2SK2018-01S page 2
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Datasheet Summary

2SK2018-01L,S FAP-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof N-channel MOS-FET 60V 0,1Ω 10A 20W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics -...