2SK2165-01 Datasheet | Fuji Electric

Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode N-channel MOS-FET 60V 0,03Ω 40A 100W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC Converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 60 60 40 160 ±20 100 150 -55 ~ +150 Unit V V A A V W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I I I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV DR DRM SD rr rr Test conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=60V Tch=25°C VGS=0V Tch=125°C VGS=±16V VDS=0V ID=20A VGS=4V ID=20A VGS=10V ID=20A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=40A VGS=10V RGS=25Ω Tch=25°C L = 100µH Min. 60 1,0 Typ. 1,5 Max. 2,0 500 1,0 10,0 0,05 0,03 2400 870 480 23 140 450 290 40 160 0,03 0,02 25 1600 580 320 15 90 300 190 IF=2x IDR VGS=0V Tch=25°C IF=IDR VGS=0V -d IF/dt=100A/µs Tch=25°C 1,4 80 0,17 Unit V V µA m A µA Ω Ω S p F p F p F ns ns ns ns A A A V ns µC Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to...