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2SK2649-01R - N-channel MOS-FET

Features

  • High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 800V 1,5Ω 9A 100W > Outline Drawing >.

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Datasheet Details

Part number 2SK2649-01R
Manufacturer Fuji Electric
File Size 372.02 KB
Description N-channel MOS-FET
Datasheet download datasheet 2SK2649-01R Datasheet
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Full PDF Text Transcription

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2SK2649-01R FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 800V 1,5Ω 9A 100W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings T( C=25°C), unless otherwise specified > Equivalent Circuit Rating 800 9 36 ±30 9 141 100 150 -55 ~ +150 Unit V A A V A mJ W °C °C Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max.
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