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2SK2687-01 - N-Channel Silicon Power MOSFET

Datasheet Summary

Features

  • High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof.

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Datasheet Details

Part number 2SK2687-01
Manufacturer Fuji Electric
File Size 295.23 KB
Description N-Channel Silicon Power MOSFET
Datasheet download datasheet 2SK2687-01 Datasheet
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Full PDF Text Transcription

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2SK2687-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Outline Drawings TO-220AB Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source peak voltage Maximum avalanche energy Maximum power dissipation Operating and storage temperature range Symbol VDS ID ID[puls] VGS EAV PD Tch Tstg Rating 30 Unit V Remarks ±50 A ±200 A ±16 V 520 mJ *1 60 W +150 °C -55 to +150 °C *1 L=0.
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