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2SK2688-01 - N-channel MOS-FET

Datasheet Summary

Features

  • High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 30V 0,017Ω ±50A 60W > Outline Drawing >.

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Datasheet Details

Part number 2SK2688-01
Manufacturer Fuji Electric
File Size 144.00 KB
Description N-channel MOS-FET
Datasheet download datasheet 2SK2688-01 Datasheet
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2SK2688-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 30V 0,017Ω ±50A 60W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 30 ±50 ±200 ±16 520 60 150 -55 ~ +150 L=0.
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