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2SK2765-01 - N-channel MOS-FET

Features

  • High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 800V 2Ω 7A 125W > Outline Drawing >.

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Datasheet Details

Part number 2SK2765-01
Manufacturer Fuji Electric
File Size 328.04 KB
Description N-channel MOS-FET
Datasheet download datasheet 2SK2765-01 Datasheet
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2SK2765-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 800V 2Ω 7A 125W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max.
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