2SK2806-01 - N-channel MOS-FET

Fuji Electric

Key Features

High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 30V 0,02Ω 35A 30W > Outline Drawing >.

2SK2806-01 n-channel mos-fet by Fuji Electric - Datasheet Preview

Datasheet Details

Part number	2SK2806-01
Manufacturer	Fuji Electric
File Size	358.29 KB
Description	N-channel MOS-FET
Datasheet	2SK2806-01 Datasheet

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Other Datasheets by Fuji Electric

Part Number	Description
2SK2806	N-channel MOS-FET
2SK2807-01L	N-channel MOS-FET
2SK2807-01S	N-channel MOS-FET
2SK2808	N-channel MOS-FET
2SK2808-01MR	N-channel MOS-FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2806-01 FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 30V 0,02Ω 35A 30W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max.