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2SK2870-01S - N-channel MOS-FET

Features

  • High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 450V 1,2Ω ±8A 50W > Outline Drawing >.

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Datasheet Details

Part number 2SK2870-01S
Manufacturer Fuji Electric
File Size 240.51 KB
Description N-channel MOS-FET
Datasheet download datasheet 2SK2870-01S Datasheet
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Full PDF Text Transcription

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2SK2870-01L,S FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 450V 1,2Ω ±8A 50W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repatitive or non-repatitive Max. Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS I AV E AV PD T ch T stg Rating 450 ±8 ±32 ±35 8 215.9 50 150 -55 ~ +150 L=6.
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