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2SK2896-01S - N-channel MOS-FET

Features

  • High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated 60V N-channel MOS-FET 12mΩ ±45A 60W > Outline Drawing >.

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Datasheet preview – 2SK2896-01S

Datasheet Details

Part number 2SK2896-01S
Manufacturer Fuji Electric
File Size 239.53 KB
Description N-channel MOS-FET
Datasheet download datasheet 2SK2896-01S Datasheet
Additional preview pages of the 2SK2896-01S datasheet.

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Full PDF Text Transcription

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2SK2896-01L,S FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated 60V N-channel MOS-FET 12mΩ ±45A 60W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 ±45 ±180 ±20 461.9 60 150 -55 ~ +150 L=0.
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