Datasheet4U Logo Datasheet4U.com

2SK3362-01 - N-CHANNEL SILICON POWER MOSFET

Download the 2SK3362-01 datasheet PDF. This datasheet also covers the 2SK3362 variant, as both devices belong to the same n-channel silicon power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK3362_FujiElectric.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3360 N-Channel MOSFET NEC
2SK3361 N-Channel MOSFET NEC
2SK3363-01 N-Channel 30V MOSFET VBsemi
2SK3365 N-Channel MOSFET NEC
2SK3365 MOS Field Effect Transistor Kexin

Other Datasheets by Fuji Electric

Part Number Description
2SK3362 N-Channel MOSFET
2SK3363-01 N-Channel MOSFET
2SK3364-01 N-Channel MOSFET
2SK3337-01 N-CHANNEL SILICON POWER MOS-FET
2SK3338-01 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK3362-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Outline Drawings TO-220AB Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source peak voltage Maximum avalanche energy Maximum power dissipation Operating and storage temperature range Symbol VDS ID ID[puls] VGS EAV PD Tch Tstg Rating 60 Unit Remarks V ±50 A ±200 A ±20 V 867 mJ *1 80 W +150 -55 to +150 °C °C *1 L=0.