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2SK3474-01
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOSFET200303
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Applications
for Switching
Foot Print Pattern
Absolute Maximum Ratings at Tc=25°C
( unless otherwise specified)
Unit V V A Continuous drain current A A Pulsed drain current ID(puls] V Gate-source voltage VGS A Repetitive or non-repetitive IAR *2 mJ Maximum Avalanche Energy EAS *1 kV/µs Maximum Drain-Source dV/dt dV DS /dt kV/µs Peak Diode Recovery dV/dt dV/dt *3 Max. power dissipation PD W W Operating and storage Tch °C temperature range Tstg °C < *1 L=0.228mH, Vcc=48V, See to Avalanche Energy Graph *2 Tch =150°C *3 *4 Surface mounted on 1000mm2, t=1.
2SK3474-01 Datasheet
