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2SK3502-01MR - N CHANNEL SILICON POWER MOSET

Download the 2SK3502-01MR datasheet PDF. This datasheet also covers the 2SK3502 variant, as both devices belong to the same n channel silicon power moset family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK3502_FujiElectric.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SK350 N-Channel MOSFET Transistor Inchange Semiconductor
2SK350 Silicon N-Channel MOSFET Hitachi
2SK3501 N-Channel MOSFET Transistor Inchange Semiconductor
2SK3503 N-Channel MOSFET Kexin
2SK3503 N-Channel MOSFET NEC

Other Datasheets by Fuji Electric

Part Number Description
2SK3501-01 N-CHANNEL SILICON POWER MOSFET
2SK3504-01 N-CHANNEL SILICON POWER MOSFET
2SK3512-01L N-Channel MOSFET
2SK3512-S N-Channel MOSFET
2SK3512-SJ N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK3502-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 600 V Continuous drain current ID ±10 A Pulsed drain current ID(puls] ±40 A Gate-source voltage VGS ±30 V Repetitive or non-repetitive IAR *2 10 A Maximum Avalanche Energy EAS *1 217 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs Peak Diode Recovery dV/dt dV/dt *3 5 kV/µs Max. power dissipation PD Ta=25°C Tc=25°C 2.