• Part: 2SK3581-01S
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 276.71 KB
Download 2SK3581-01S Datasheet PDF
Fuji Electric
2SK3581-01S
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Symbol Ratings Unit V V DS 500 A ID ±16 A ID(puls] ±64 V VGS ±30 A IAR - 2 16 m J EAS - 1 212.2 k V/µs d VDS/dt - 4 20 d V/dt - 3 5 k V/µs PD Ta=25°C 1.67 W Tc=25°C 225 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C - 1 L=1.52m H, Vcc=50V,Tch=25°C, See to Avalanche Energy Graph - 2 Tch < 150°C = - 3 IF < - 4 VDS < = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < = 500V Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C...