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2SK3581-01S - N-CHANNEL SILICON POWER MOSFET

Download the 2SK3581-01S datasheet PDF. This datasheet also covers the 2SK3581-01L variant, as both devices belong to the same n-channel silicon power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4.

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Note: The manufacturer provides a single datasheet file (2SK3581-01L_FujiElectric.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for 2SK3581-01S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SK3581-01S. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com 2SK3581-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on...

View more extracted text
Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Symbol Ratings Unit V V DS 500 A ID ±16 A ID(puls] ±64 V VGS ±30 A IAR *2 16 mJ EAS *1 212.2 kV/µs dVDS/dt *4 20 dV/dt *3 5 kV/µs PD Ta=25°C 1.67 W Tc=25°C 225 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C *1 L=1.

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