• Part: 2SK3587-01MR
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 93.19 KB
Download 2SK3587-01MR Datasheet PDF
Fuji Electric
2SK3587-01MR
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 100 V 70 A Continuous drain current ±73 Equivalent A Pulsed drain current ±292 V Gate-source voltage ±30 A Non-repetitive Avalanche current 73 m J Maximum Avalanche Energy 319.2 k V/µs Maximum Drain-Source d V/dt 20 k V/µs Peak Diode Recovery d V/dt 5 Max. power dissipation 2.16 W Gate(G) 95 Operating and storage Tch +150 °C temperature range Tstg -55 to +150 °C Isolation Voltage VISO - 6 2 k Vrms - 1 L=71.9µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph - 2 Tch < =150°C - 3 IF< = BVDSS, Tch < = 150°C - 4 VDS < = -ID, -di/dt=50A/µs, Vcc < =100V - 5 VGS=-30V - 6 t=60sec, f=60Hz Item Drain-source voltage Symbol V DS VDSX - 5 ID ID(puls]...