Datasheet4U Logo Datasheet4U.com

2SK3587-01MR - N-CHANNEL SILICON POWER MOSFET

Datasheet Summary

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-.

📥 Download Datasheet

Datasheet preview – 2SK3587-01MR

Datasheet Details

Part number 2SK3587-01MR
Manufacturer Fuji Electric
File Size 93.19 KB
Description N-CHANNEL SILICON POWER MOSFET
Datasheet download datasheet 2SK3587-01MR Datasheet
Additional preview pages of the 2SK3587-01MR datasheet.
Other Datasheets by Fuji Electric

Full PDF Text Transcription

Click to expand full text
2SK3587-01MR FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 100 V 70 A Continuous drain current ±73 Equivalent A Pulsed drain current ±292 V Gate-source voltage ±30 A Non-repetitive Avalanche current 73 mJ Maximum Avalanche Energy 319.2 kV/µs Maximum Drain-Source dV/dt 20 kV/µs Peak Diode Recovery dV/dt 5 Max. power dissipation 2.
Published: |