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2SK3589-01 - N-CHANNEL SILICON POWER MOSFET

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3589-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Outline Drawings (mm) O Š }•@–¡`Œ OUT VIEW Fig.1 o ‚Q Ž}‹• î– Æ• MARKING • Ž ¦ “ à — e Fig.1 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters o ‚ }‹•Žî– Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max.
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