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2SK3590-01
FUJI POWER MOSFET
Super FAP-G Series
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220AB
Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
150
V
VDSX *5
120
V
Continuous drain current
ID
±57
A
Pulsed drain current
ID(puls]
±228
A
Gate-source voltage
VGS
±30
V
Non-repetitive Avalanche current IAS *2
57
A
Maximum Avalanche Energy
EAS *1
272.5
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5
kV/µs
Max.
2SK3590-01 Datasheet
