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2SK3598-01 - N-CHANNEL SILICON POWER MOSFET

Datasheet Summary

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200304 N-.

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Datasheet Details

Part number 2SK3598-01
Manufacturer Fuji Electric
File Size 93.27 KB
Description N-CHANNEL SILICON POWER MOSFET
Datasheet download datasheet 2SK3598-01 Datasheet
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Full PDF Text Transcription

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2SK3598-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 100 V VDSX *5 70 V Continuous drain current ID ±29 A Pulsed drain current ID(puls] ±116 A Gate-source voltage VGS ±30 V Non-repetitive Avalanche current IAS *2 29 A Maximum Avalanche Energy EAS *1 155.8 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs Peak Diode Recovery dV/dt dV/dt *3 5 kV/µs Max.
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