2SK3646-01S
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
P4
Maximum ratings and characteristic Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX
- 5 ID ID(puls] VGS IAS
- 2 EAS
- 1 d VDS/dt
- 4 d V/dt
- 3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 100 70 ±41 ±164 ±30 41 204.7 20 5 1.67 150 +150 -55 to +150 Unit V V A A V A m J k V/µs k V/µs W °C °C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
- 1 L=146µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph
- 3 IF< = BVDSS, Tch < = 150°C
- 4 V DS < = -ID, -di/dt=50A/µs,...
