• Part: 2SK3647-01
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 120.65 KB
Download 2SK3647-01 Datasheet PDF
Fuji Electric
2SK3647-01
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Symbol V DS VDSX - 5 ID Tc=25°C Ta=25°C ID(puls] VGS IAS - 2 EAS - 1 d VDS/dt - 4 d V/dt - 3 PD Tc=25°C Ta=25°C Ratings 100 70 ±41 ±5.2 - - ±164 ±30 41 204.7 20 5 150 2.4 - - +150 -55 to +150 Unit V V A A A V A m J k V/µs k V/µs W Foot Print Pattern Equivalent circuit schematic D : Drain G : Gate Operating and storage Tch °C temperature range Tstg °C S1 : Source - - Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) -...