• Part: 2SK3649-01MR
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 132.37 KB
Download 2SK3649-01MR Datasheet PDF
Fuji Electric
2SK3649-01MR
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol V DS VDSX - 5 ID ID(puls] VGS IAR - 2 EAS - 1 d VDS/dt - 4 d V/dt - 3 PD Ta=25°C Tc=25°C Tch Tstg Viso - 6 Ratings 150 120 ±33 ±132 ±30 33 169 20 5 2.16 53 +150 -55 to +150 2 Unit V V A A V A m J k V/µs k V/µs W °C °C k Vrms Equivalent circuit schematic Drain(D) Gate(G) Source(S) < - 1 L=228µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph - 2 Tch=150°C < < < < - 3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C - 4 VDS =150V - 5...