2SK3651-01R Datasheet | Fuji Electric

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 200 V 220 A Continuous drain current ±25 A Pulsed drain current ±100 V Gate-source voltage ±30 A Non-repetitive Avalanche current 25 m J Maximum Avalanche Energy 372 k V/µs Maximum Drain-Source d V/dt 20 k V/µs Peak Diode Recovery d V/dt 5 Max. power dissipation 3.10 W 85 Operating and storage Tch +150 °C -55 to +150 temperature range Tstg °C Isolation voltage VISO - 6 2 k Vrms - 1 L=1m H, Vcc=48V - 2 Tch< =150°C - 3 IF< = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < - 4 VDS < - 5 VGS=-30V - 6 t=60sec f=60Hz = 250V Item Drain-source voltage Symbol V DS VDSX - 5 ID ID(puls] VGS IAS - 2 EAS - 1 d VDS/dt - 4 d V/dt - 3 PD Ta=25°C Tc=25°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=250V VDS=200V VGS=±30V ID=12.5A VGS=0V VGS=0V VDS=0V VGS=10V Tch=25°C Tch=125°C 10 75 16 2000 400 25 20 30 60 20 44 14 16 1.10 0.45 1.5 Min. 250 3.0 Typ. Max. 5.0 25 250 100 100 3000 600 38 30 45 90 30 66 21 24 1.65 Units V V µA n A mΩ S p F ID=12.5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=72V...