2SK3681-01 - N-CHANNEL SILICON POWER MOSFET

Fuji Electric

Key Features

Outline Drawings [mm] High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power 11.6±0.2.

2SK3681-01 n-channel silicon power mosfet by Fuji Electric - Datasheet Preview

Datasheet Details

Part number	2SK3681-01
Manufacturer	Fuji Electric
File Size	116.14 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	2SK3681-01 Datasheet

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2SK3681-01 FUJI POWER MOSFET Super FAP-G Series 200401 N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power 11.6±0.2 Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Remarks Drain-source voltage VDS 600 V VDSX 600 V VGS=-30V Continuous drain current ID ±43 A Pulsed drain current ID(puls] ±172 A Gate-source voltage VGS ±30 V Non-Repetitive IAS 43 A Tch=25°C Maximum avalanche current Repetitive or IAR *1 21.5 A Tch<=150°C Maximum avalanche current *1 Non-Repetitive EAS 808.