2SK3683-01MR - N-CHANNEL SILICON POWER MOSFET

Fuji Electric

Key Features

High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Outline Drawings [mm] TO-220F.

2SK3683-01MR n-channel silicon power mosfet by Fuji Electric - Datasheet Preview

Datasheet Details

Part number	2SK3683-01MR
Manufacturer	Fuji Electric
File Size	102.61 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	2SK3683-01MR Datasheet

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2SK3683-01MR FUJI POWER MOSFET Super FAP-G Series 200309 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Outline Drawings [mm] TO-220F Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Drain-source voltage VDS 500 VDSX 500 Continuous drain current ID ±19 Pulsed drain current ID(puls] ±76 Gate-source voltage VGS ±30 Non-Repetitive IAS 19 Maximum avalanche current Non-Repetitive EAS 245.3 Maximum avalanche energy Maximum Drain-Source dV/dt dVDS/dt 20 Peak diode recovery dV/dt dV/dt 5 Max. power dissipation PD 2.