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2SK3684-01SJ - N-CHANNEL SILICON POWER MOSFET

Download the 2SK3684-01SJ datasheet PDF. This datasheet also covers the 2SK3684-01S variant, as both devices belong to the same n-channel silicon power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK3684-01S_FujiElectric.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fuji Electric

Part Number Description
2SK3684-01S N-CHANNEL SILICON POWER MOSFET
2SK3684-01L N-CHANNEL SILICON POWER MOSFET
2SK3680-01 N-CHANNEL SILICON POWER MOSFET
2SK3681-01 N-CHANNEL SILICON POWER MOSFET
2SK3682-01 N-CHANNEL SILICON POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK3684-01L,S,SJ FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-Repetitive Maximum avalanche current Non-Repetitive Maximum avalanche energy Maximum Drain-Source dV/dt Peak diode recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol Ratings V DS 500 VDSX 500 ID ±19 ID(puls] ±76 VGS ±30 IAS 19 EAS dV DS/dt dV/dt PD Tch Tstg 245.