2SK3691-01MR - N-CHANNEL SILICON POWER MOSFET

Fuji Electric

Download the 2SK3691-01MR datasheet PDF. This datasheet also covers the 2SK3690-01MR variant, as both devices belong to the same n-channel silicon power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power.

📥 Download Datasheet

2SK3691-01MR n-channel silicon power mosfet by Fuji Electric - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2SK3690-01MR_FujiElectric.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2SK3691-01MR
Manufacturer	Fuji Electric
File Size	145.90 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	2SK3691-01MR Datasheet

📁 Similar Datasheet

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2SK3693-01MR	N-Channel MOSFET Transistor	Inchange Semiconductor
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Other Datasheets by Fuji Electric

Part Number	Description
2SK3690-01	N-CHANNEL SILICON POWER MOSFET
2SK3692-01	N-CHANNEL SILICON POWER MOSFET
2SK3693-01MR	N-CHANNEL SILICON POWER MOSFET
2SK3694-01L	N-CHANNEL SILICON POWER MOSFET
2SK3694-01S	N-CHANNEL SILICON POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2SK3691-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max.