• Part: 2SK3727-01
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 134.27 KB
Download 2SK3727-01 Datasheet PDF
Fuji Electric
2SK3727-01
2SK3727-01 is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Operating and storage temperature range Symbol Ratings V DS 900 VDSX - 5 900 ID ±2.2 ID(puls] ±8.8 VGS ±30 IAR - 2 2.2 EAS - 1 127.2 d VDS/dt - 4 40 d V/dt - 3 5 PD Ta=25°C 2.02 Tc=25°C 75 Tch +150 -55 to +150 Tstg Unit V V A A V A m J k V/µs k V/µs W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) - 1 L=48.2m H, Vcc=90V, Tch=25°C See to Avalanche Energy Graph - 2 Tch < =150°C - 3 IF< = BVDSS, Tch < = 150°C - 4 VDS< 900V - 5 VGS=-30V = -ID, -di/dt=50A/µs, Vcc < = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=900V VGS=0V Tch=25°C Tch=125°C VDS=720V VGS=0V VGS=±30V VDS=0V ID=1.1A VGS=10V ID=1.1A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=1.1A VGS=10V RGS=10 Ω VCC =450V ID=2.2A VGS=10V L=48.2m H Tch=25°C IF=2.2A VGS=0V Tch=25°C IF=2.2A VGS=0V -di/dt=100A/µs Tch=25°C Min. 900 3.0 Typ. Max. 5.0 25 250 100 8.00 375 55 3.3 26 9 39 42 12.5 5.1 3.3 1.50 Units V V µA n A...