• Part: 2SK3730-01MR
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 539.91 KB
Download 2SK3730-01MR Datasheet PDF
Fuji Electric
2SK3730-01MR
2SK3730-01MR is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof - Outline Drawings [mm] - Equivalent circuit schematic Drain (D) - Applications Switching regulators DC-DC converters General purpose power amplifier Gate (G) Source (S) - Absolute Maximum Ratings at Tc=25℃(unless otherwise specified) Description Symbol Characteristics Unit Remarks Drain-Source Voltage VDSX Continuous Drain Current ±70 Pulsed Drain Current ±280 Gate-Source Voltage ±20 Non-Repetitive Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Maximum Power Dissipation Tch Operating and Storage Temperature range Tstg 150 -55 to +150 Note- 1 : Tch≦150℃,See Fig.1 and Fig.2 Note- 2 : Starting Tch=25℃,L=48μH,VCC=48V,RG=50Ω,See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. See to Avalanche Energy graph of page 4 - Electrical Characteristics at Tc=25℃(unless otherwise specified) Static...