2SK3774-01SJ - N-CHANNEL SILICON POWER MOSFET

Fuji Electric

Download the 2SK3774-01SJ datasheet PDF. This datasheet also covers the 2SK3774-01L variant, as both devices belong to the same n-channel silicon power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power.

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2SK3774-01SJ n-channel silicon power mosfet by Fuji Electric - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2SK3774-01L-FujiElectric.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2SK3774-01SJ
Manufacturer	Fuji Electric
File Size	142.95 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	2SK3774-01SJ Datasheet

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Other Datasheets by Fuji Electric

Part Number	Description
2SK3774-01S	N-CHANNEL SILICON POWER MOSFET
2SK3774-01L	N-CHANNEL SILICON POWER MOSFET
2SK3775-01	N-CHANNEL SILICON POWER MOSFET
2SK3776-01	N-CHANNEL SILICON POWER MOSFET
2SK3777-01R	N-CHANNEL SILICON POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Drain-source voltage VDS 300 VDSX 300 Continuous Drain Current ID 32 Pulsed Drain Current ID(puls] ±128 Gate-Source Voltage VGS ±30 Maximum Avalanche current IAR 32 Non-Repetitive EAS 597.