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2SK3917-01MR - N-CHANNEL SILICON POWER MOSFET

Features

  • High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power.

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Datasheet Details

Part number 2SK3917-01MR
Manufacturer Fuji Electric
File Size 116.28 KB
Description N-CHANNEL SILICON POWER MOSFET
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Full PDF Text Transcription

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2SK3917-01MR FUJI POWER MOSFET Super FAP-G Series 200509 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Outline Drawings [mm] TO-220F Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Symbol VDS VDSX ID ID(puls] VGS IAR Ratings 450 450 4.3 ±17.2 ±30 4.3 Unit V V A A V A Remarks VGS=-30V Note *1 Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Max.
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