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2SK4005-01MR - Power MOSFET

General Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Maximum Power Dissipation Op

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. DRAWN DATE Jan.-31-'05 CHECKED Jan.-31-'05 Jan.-31-'05 Date Spec. No. Device Name Type Name : : : : NAME APPROVED SPECIFICATION Jan.-31-2005 2SK4005-01MR Power MOSFET MS5F5984 DWG.NO. MS5F5984 1 / 18 Fuji Electric Device Technology Co.,Ltd. H04-004-05 Free Datasheet http://www.datasheet4u.com/ This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd.