6MBI10S-120L
6MBI10S-120L is IGBT manufactured by Fuji Electric.
Features
- NPT-Technologie
- Solderable Package
- Square SC SOA at 10 x IC
- High Short Circuit Withstand-Capability
- Small Temperature Dependence of the Turn-Off Switching Loss
- Low Losses And Soft Switching
6-Pack IGBT 1200V 6x10A n Outline Drawing n Applications
- High Power Switching
- A.C. Motor Controls
- D.C. Motor Controls
- Uninterruptible Power Supply n Maximum Ratings and Characteristics
- Absolute Maximum Ratings
Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current (25°C / 80°C) Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting
- 1 ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres t ON tr t OFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=10m A VGE=15V IC=10A VGE=0V VCE=10V f=1MHz VCC=600V IC=10A VGE=± 15V RG=120Ω IF=10A VGE=0V IF=10A Ratings 1200 ± 20 15 / 10 30 / 20 15 / 10 30 / 20 100 +150 -40 ∼ +125 2500 3.5 Units V V A W °C °C V Nm n Equivalent Circuit
Note:
- 1:Remendable Value; 2.5 ∼ 3.5 Nm (M5)
- Electrical Characteristics
Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time
Min.
Typ.
6.0 2.1 1200
Max. 1.0 200 9.0
Units m A µA V V p F
0.60 0.40 0.45 0.10
1.2 0.6 1.0 0.3 3.3 350
µs V ns
- Thermal Characteristics
Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal pound Min. Typ. Max. 1.25 2.00 Units °C/W
For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http://.collmer....