7MBR50UA120 Datasheet | Fuji Electric

Features - Low VCE(sat) - pact Package - P.C. Board Mount Module - Converter Diode Bridge Dynamic Brake Circuit Applications - Inverter for Motoe Drive - AC and DC Servo Drive Amplifier - Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current ICP -IC -IC pulse PC VCES VGES IC ICP Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) 1ms Duty=70% 1ms 1 device Symbol VCES VGES IC Condition Rating 1200 ±20 50 35 100 70 50 100 205 1200 ±20 25 15 50 30 115 1200 1600 50 260 338 +150 -40 to +125 AC 2500 AC 2500 3.5 - 1 Unit V V A Continuous Tc=25°C Tc=80°C Tc=25°C Tc=80°C Inverter Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake Continuous 1ms 1 device Tc=25°C Tc=80°C Tc=25°C Tc=80°C PC V RRM V RRM IO IFSM I2t Tj Operating junction temperature Tstg Storage temperature Isolation between terminal and copper base - 2 Viso voltage between thermistor and others - 3 Mounting screw torque Converter 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave AC : 1 minute W V V A A A 2s °C °C V N- m - 1 Remendable value : 2.5 to 3.5 N- m (M5) - 2 All terminals should be connected together when isolation test will be done. - 3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. IGBT Module Electrical characteristics (Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbol ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr ICES IGES VCE(sat) (terminal) VCE(sat) (chip) ton tr toff tf IRRM V...