• Part: ESAC33MN
  • Description: FAST RECOVERY DIODE
  • Category: Diode
  • Manufacturer: Fuji Electric
  • Size: 68.63 KB
Download ESAC33MN Datasheet PDF
Fuji Electric
ESAC33MN
ESAC33MN is FAST RECOVERY DIODE manufactured by Fuji Electric.
Features Insulated package by fully molding High voltage by mesa design High reliability JEDEC EIAJ SC-67 Connection diagram 2 ESAC33MC 1 2 ESAC33MN 1 2 3 3 Applications High speed switching Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM IO IFSM Tj Tstg Conditions ESAC33M- Rating -02 200 200 Unit V V A A °C °C Square wave, duty=1/2, Tc=95°C Sine wave 10ms 8- 30 -40 to +150 -40 to +150 - Average forward current of centertap full wave connection Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Reverse recovery time Thermal resistance Symbol VFM IRRM t rr Rth(j-c) Conditions IFM=2.0A VR=VRRM IF=0.1A, IR=0.1A Junction to case Max. 1.4 500 100 3.5 Unit V µA ns °C/W (200V / 8A ) Characteristics Forward characteristics 10 10 5 3 1.0 ESAC33M(C,N,D)(8A) Reverse characteristics IF [A] 1 0.5 IR [µA] 0.01 0.005 0.1 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 100 200 300 VF [V] VR [V] Forward power dissipation 12 140 10 8 120 Output current-case temperature WF 6 [W] 4 2 Tc [°C]...