FA1A50N Overview
Rating & characteristics Stress exceeding ratings may malfunction or damage the device. “-” shows source and “+” shows sink in current descriptions.
FA1A50N Key Features
- Very Low Standby Power by disusing Input Voltage Detection Resistors
- High-precision over current protection : 0.6V±2%
- Improved power efficiency at light load due to Maximum Frequency
- Soften Audible Noise at Startup Over Shoot Reduction functions
- Low current consumption by CMOS process
- Start-up : 500µA(typ.), Operating : 1.5mA(typ.)
- Enabled to drive power MOSFET directly
- Output peak current, source : 500mA, sink : 1000mA
- Protects the output electrolytic capacitor by the double OVP function, even if
- Short protection at feedback (FB) pin