Description
Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Forward Voltage Drop Diode Reverse Recovery Time Diode Reverse Recovery Charge Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbol ICES IGES VGE (th) VCE (sat) Cies Coes Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff VF trr Qrr trr Qrr Conditions VCE = 1200V, VGE = 0V Tj=25°C Tj=175°C VCE = 0V, VGE = ±20V VCE = 20V, IC = 25mA VGE = 15V, IC = 25A Tj=25°C Tj=175°C VCE=25V VGE=0V f=1MHz VCC = 400V IC = 25A VGE = 15V Tj = 25°C VCC = 600V IC = 25A VGE = 15V RG = 10Ω L = 500μH Energy loss include “tail” and FWD (FDRW20S120J) reverse recovery.
Key Features
- Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.)
