FGW75XS120
FGW75XS120 is Discrete IGBT manufactured by Fuji Electric.
Features
Pb-free lead terminal; Ro HS pliant Halogen-free molding pound
Applications Uninterrupted Power Supply, PV Power Conditioner, Inverter welding machine http://.fujielectric./products/semiconductor/ Discrete IGBT
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tvj = 25 °C (unless otherwise specified)
Parameter
Symbol
Collector-Emitter Voltage
VCES
Gate-Emitter Voltage Transient Gate-Emitter Voltage
VGES
DC Collector Current
IC@25 IC@100
Pulsed Collector Current
Max. Power Dissipation
Ptot
Operating Junction Temperature Tvj
Storage Temperature
Tstg
Value 1200 ± 20 ± 30 117
75 300 649 -40 ~ +175 -55 ~ +175
Unit
Remarks
V tp < 1 μs A TC = 25 °C A TC = 100 °C A Note
- 1 W TC = 25 °C °C °C
Note
- 1 : Pulse width limited by Tvj max.
Electrical Characteristics at Tvj = 25 °C (unless otherwise specified)
Parameter Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol ICES IGES VGE(th)
VCE(sat)
VCE = 1200 V VGE = 0 V VCE = 0 V VGE = ± 20 V VCE = 20 V IC = 75 m A
VGE = 15 V IC = 75 A
Conditions Tvj = 25 °C Tvj = 175 °C
Tvj = 25 °C Tvj = 125 °C Tvj = 175 °C
Input Capacitance
Cies...