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FMH23N50ES - N-CHANNEL SILICON POWER MOSFET

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID IDP VGS

Features

  • Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Outline Drawings [mm] TO-3P (Q) Equivalent circuit schematic Drain(D).

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Datasheet Details

Part number FMH23N50ES
Manufacturer Fuji Electric
File Size 478.63 KB
Description N-CHANNEL SILICON POWER MOSFET
Datasheet download datasheet FMH23N50ES Datasheet
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Full PDF Text Transcription

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FMH23N50ES Super FAP-E3S series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.
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