FMH23N50ES - N-CHANNEL SILICON POWER MOSFET

Product Overview

Fuji Electric

Datasheet Details

Part number	FMH23N50ES
Manufacturer	Fuji Electric
File Size	478.63 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	FMH23N50ES Datasheet
Additional preview pages of the FMH23N50ES datasheet.

Product details

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID IDP VGS IAR EAS EAR dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Temperature range Tch Tstg Characteristics 500 500 ±23 ±92 ±30 23 767.3 31.5 5.4 100 2.50 315 150 -55 to + 150 Unit V

Features

Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Outline Drawings [mm] TO-3P (Q) Equivalent circuit schematic Drain(D).

📁 Similar Datasheet

FMH23N50E - N-Channel MOSFET (INCHANGE)
FMH20N50E - N-Channel MOSFET (INCHANGE)
FMH20N60S1 - N-Channel MOSFET (INCHANGE)
FMH-12R - Ultra-Fast-Recovery Rectifier Diodes (Sanken electric)
FMH07N90E - N-Channel MOSFET (INCHANGE)
FMH08N80E - N-Channel MOSFET (INCHANGE)
FMH09N90E - N-Channel MOSFET (INCHANGE)
FMH30N60S1FD - N-Channel MOSFET (INCHANGE)

Other Datasheets by Fuji Electric

FMH23N50E - N-CHANNEL SILICON POWER MOSFET
FMH23N60E - N-CHANNEL SILICON POWER MOSFET
FMH23N60ES - N-CHANNEL SILICON POWER MOSFET
FMH20N50E - N-CHANNEL SILICON POWER MOSFET
FMH20N50ES - N-CHANNEL SILICON POWER MOSFET
FMH20N60S1 - N-CHANNEL SILICON POWER MOSFET

Published: Mar 7, 2012 |