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FMH30N60S1 - N-Channel enhancement mode power MOSFET

Description

Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAR E

Features

  • Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg).

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Datasheet Details

Part number FMH30N60S1
Manufacturer Fuji Electric
File Size 509.97 KB
Description N-Channel enhancement mode power MOSFET
Datasheet download datasheet FMH30N60S1 Datasheet
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FMH30N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) Applications UPS Server Telecom Power conditioner system Power supply Outline Drawings [mm] TO-3P 15.5max 13 ± 0.2 10 ± 0.2 φ3.2± 0.1 1.5±0.2 4.5±0.2 5 ±0.1 1.5 3 ±0.2 19.5 ±0.2 14.5 ±0.2 1.6 +0.3 -0.1 2.2 +0.3 -0.1 5.45 ± 0.2 1.6 +0.3 -0.1 1.1 +0.2 -0.1 5.45 ± 0.2 PRE-SOLDER 0.5 +0.2 0 1.5 CONNECTION 1 GATE 2 DRAIN 3 SOURCE JEDEC : TO-3P DIMENSIONS ARE IN MILLIMETERS.
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