Datasheet4U Logo Datasheet4U.com

FMH30N60S1 - N-Channel enhancement mode power MOSFET

General Description

Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAR E

Key Features

  • Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FMH30N60S1FD N-Channel MOSFET INCHANGE
FMH35N60S1FD N-Channel MOSFET INCHANGE
FMH-12R Ultra-Fast-Recovery Rectifier Diodes Sanken electric
FMH07N90E N-Channel MOSFET INCHANGE
FMH08N80E N-Channel MOSFET INCHANGE

Other Datasheets by Fuji Electric

Part Number Description
FMH30N60S1FD N-Channel MOSFET
FMH35N60S1FD N-Channel MOSFET
FMH06N90E N-CHANNEL SILICON POWER MOSFET
FMH07N90E N-CHANNEL SILICON POWER MOSFET
FMH09N90E N-CHANNEL SILICON POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FMH30N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) Applications UPS Server Telecom Power conditioner system Power supply Outline Drawings [mm] TO-3P 15.5max 13 ± 0.2 10 ± 0.2 φ3.2± 0.1 1.5±0.2 4.5±0.2 5 ±0.1 1.5 3 ±0.2 19.5 ±0.2 14.5 ±0.2 1.6 +0.3 -0.1 2.2 +0.3 -0.1 5.45 ± 0.2 1.6 +0.3 -0.1 1.1 +0.2 -0.1 5.45 ± 0.2 PRE-SOLDER 0.5 +0.2 0 1.5 CONNECTION 1 GATE 2 DRAIN 3 SOURCE JEDEC : TO-3P DIMENSIONS ARE IN MILLIMETERS.