FMI06N60ES
FMI06N60ES is manufactured by Fuji Electric.
Super FAP-E3S series http://.fujielectric./products/semiconductor/
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7±0.5V) High avalanche durability
Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Outline Drawings [mm]
T-Pack(L)
13&40-%&3
%- .&/4- 0/4"3&- /.- --- .&5&34
Maximum Ratings and Characteristics...
