FMP60N088S2HF
FMP60N088S2HF is N-Channel enhancement mode power MOSFET manufactured by Fuji Electric.
Features
Pb-free lead terminal Ro HS pliant uses Halogen-free molding pound
Outline Drawings [mm]
TO-220
П3.6± 0.2
+0.5 0
2.7 ±0.1
4.5±0.2 1.3±0.2
6.4 ±0.2 15 ± 0.2
Applications For switching
3.6 ±0.2 13.5 min.
1.2 ± 0.2
1 2.54 ± 0.2
+0.2 -0.1
2.54± 0.2
PRE-SOLDER
+0.2 0
2.7±0.2
1 23
CONNECTION
1 GATE 2 DRAIN 3 SOURCE JEDEC : TO-220AB DIMENSIONS ARE IN MILLIMETERS.
Absolute Maximum Ratings at TC=25°C (unless otherwise specified)
Parameter Drain-Source Voltage
Symbol
VDS VDSX
Continuous Drain Current
Pulsed Drain Current Gate-Source Voltage
Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Maximum Drain-Source d V/dt
Continuous Diode Forward Current
Pulsed Diode Forward Current Peak Diode Recovery d V/dt Peak Diode Recovery -di/dt
IDP VGS IAS
EAS d VDS/dt ISD ISDP d V/dt -di/dt
Maximum Power...
