Datasheet Details
| Part number | FMR19N60E |
|---|---|
| Manufacturer | Fuji Electric |
| File Size | 382.85 KB |
| Description | N-CHANNEL SILICON POWER MOSFET |
| Datasheet |
 FMR19N60E Datasheet
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General Description
Drain-Source Voltage
Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt
Symbol VDS VDSX ID IDP VGS
Key Features
- Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Outline Drawings [mm] TO-3PF.