FMR23N60E
FMR23N60E is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features
Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability
Outline Drawings [mm]
TO-3PF
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery d V/dt Peak Diode Recovery -di/dt
Symbol VDS VDSX ID IDP VGS IAR EAS EAR d V/dt -di/dt
Maximum Power Dissipation
Operating and Storage Temperature range
Tch Tstg
Isolation Voltage
VISO
Characteristics 600 600 ±23 ±92 ±30 23
1033.1 20 7.5 100 3.13 200 150
-55 to + 150 2
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description Drain-Source Breakdown Voltage Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge
Symbol BVDSS VGS (th)
IDSS
IGSS RDS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr...